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Abstract

A thorough study of the selective wet oxidation in digital AlxGa1xAs alloys is presented. We report experimental results and physical interpretation on the oxidation kinetics within those ranges of the AlGaAs composition (x = 0.95 to 1) and layer thickness (20 to 50 nm) of interest for oxide-aperture vertical-cavity surface-emitting laser (VCSEL) application. We demonstrate the high controllability of the oxidation reaction between different Al compositions; made different thanks to the use of digital alloys. Unlike standard alloys, we measured an invariability of the oxidation rates in the studied thickness range (2050 nm), implying a better control of the fabrication process. The dependence of the reaction rate with the temperature is expressed as an Arrhenius law. Two activation energies (1.2 and 0.55 eV) have been derived for composition ranges of x = 0.950.98 and x = 0.991, respectively, revealing that two different mechanisms are involved depending on the Al content and the superlattice structure of the digitally-grown AlGaAs.

Mots-Clés / Keywords

Abstract

The thermal oxidation of an Al-rich AlGaAs buried layer is a common established technique used to improve the performances of some optoelectronic devices, like VCSEL or optical waveguides, in terms of electro-optical confinement. This oxidation technique is usually proceeding laterally, which allows achieving good results but leads to some difficulties on the control of the shape and size of the oxidized areas. In this work, a new technology to oxidize GaAs/AlAs epitaxial structures which avoids these limitations is presented. This method consists of an oxidation through the top of the sample, allowing in consequence a total control of the shape of oxidation by means of photolithography. For this purpose the method has two steps: first, the intentional creation of defects in the top GaAs layer, in order to make it possible the oxidant species diffusion through this material, and second the planar oxidation of the AlAs layer. In this paper this technique is thoroughly studied: different methods to create defects in the GaAs layer have been analysed, and the optimization of the procedure has been achieved leading to a uniform oxidation and a reduced lateral oxidation spreading. Finally a comparison between the experiments and simulations has been realized in order to provide an explanation for this type of vertical oxidation. This innovating technique allows addressing separately the electrical and optical operating aspects of optoelectronic devices, thus opens to novel structures with controlled transverse optical behaviour.

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Abstract

A new imaging method is presented enabling the monitoring of the lateral wet thermal oxidation of a thin Al-containing layer embedded in a vertical cavity lasers (VCSEL) structure. This method is based on the measurement of the modification of the VCSEL reflectivity spectrum inherent to the aperture layer refractive index change, with an observation window restricted to the wavelength ranges for which this reflectivity variation is maximal. The main purpose is the accurate control of the buried confinement aperture, and, thereby, that of the electro-optical characteristics of the laser device. The kinetics of the lateral oxidation has been studied for small-size aperture VCSEL (310 µm) and for long-range oxidation depths. This straightforward method based on an optical imaging system will enable robust improvement of the production yield of this multifactor-dependent technological process.

Abstract

The thermal oxidation of an Al-rich AlGaAs buried layer is a common established technique used to improve the performances of some optoelectronic devices, like VCSEL or optical waveguides, in terms of electro-optical confinement. This oxidation technique is usually proceeding laterally, which allows achieving good results but leads to some difficulties on the control of the shape and size of the oxidized areas. In this work, a new technology to oxidize GaAs/AlAs epitaxial structures which avoids these limitations is presented. This method consists of an oxidation through the top of the sample, allowing in consequence a total control of the shape of oxidation by means of photolithography. For this purpose the method has two steps: first, the intentional creation of defects in the top GaAs layer, in order to make it possible the oxidant species diffusion through this material, and second the planar oxidation of the AlAs layer. In this paper this technique is thoroughly studied: different methods to create defects in the GaAs layer have been analysed, and the optimization of the procedure has been achieved leading to a uniform oxidation and a reduced lateral oxidation spreading. Finally a comparison between the experiments and simulations has been realized in order to provide an explanation for this type of vertical oxidation. This innovating technique allows addressing separately the electrical and optical operating aspects of optoelectronic devices, thus opens to novel structures with controlled transverse optical behaviour.

Mots-Clés / Keywords

Abstract

The photoluminescence properties of silicon nanocrystals in SiO2, prepared by low-pressure chemical vapour deposition and subsequent annealing have been studied. A comprehensive range of combinations of film compositions and annealing conditions were tested. The use of two-step annealing (a rapid annealing, followed by a conventional one) used instead of the common one-step conventional annealing, enhances emission. Annealing conditions are key to the photoluminescence and structural properties of the obtained film and have been investigated in detail. Film composition is also an important parameter, which allows tuning of the emission in a wide spectral range in the near infrared.

Mots-Clés / Keywords