Laboratoire d’Analyse et d’Architecture des Systèmes
L.OURAK, A.GHANNAM, D.BOURRIER, C.VIALLON, T.PARRA
MOST, TEAM
Manifestation avec acte : Asia Pacific Microwave Conference ( APMC ) 2012 du 04 décembre au 07 décembre 2012, Kaohsiung (Taiwan), Décembre 2012, 3p. , N° 12785
Lien : http://hal.archives-ouvertes.fr/hal-00783047
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This paper presents the design, fabrication and characterization of suspended solenoidal transformers fabricated using a low cost single step 3D copper electroplating process. The design and optimization of solenoidal transformers with and without magnetic core are performed using HFSS. After optimization, the suspended structures reveal good electrical performance. The addition of a magnetic core to these structures shows a significant improvement of its electrical properties. Thus, an increase of 10% on Gmax, 20% on coupling coefficient k, 80% on the quality factor Q and 350% on the inductance is observed. Under probe measurements carried on the suspended structures without magnetic core exhibit a Gmax of -1.45 dB and a Q of 28.5 at 2.5 GHz. The enhanced performance coupled with the low cost 3D process makes these transformers excellent candidates for today s RF applications.
F.DUBOSC, D.BOURRIER, T.LEICHLE
N2IS, TEAM, NBS
Revue Scientifique : Procedia Engineering , Vol.47, pp.801-804, 2012, Seul le résumé est disponible , N° 12630
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128541F.DUBOSC, D.BOURRIER, T.LEICHLE
N2IS, TEAM, NBS
Manifestation avec acte : Eurosensors 2012 26 du 09 septembre au 12 septembre 2012, Krakow (Pologne), Seul le résumé est disponible, 2012, 2p. , N° 12630
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128540S.PINON, D.L.DIEDHIOU, A.BOUKABACHE, V.CONEDERA, D.BOURRIER, A.M.GUE, G.PRIGENT, E.RIUS, C.QUENDO, B.POTELON, J.F.FEVENNEC
N2IS, LAB-STICC, Brest, TEAM, INP ENSEEIHT
Manifestation avec acte : International Microwave Symposium (IMS 2012), Montréal (Canada), 17-22 Juin 2012, 3p. , N° 12105
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127512B.REIG, T.CAMPS, V.BARDINAL, D.BOURRIER, E.DARAN, J.B.DOUCET, J.LAUNAY, J.Y.FOURNIOLS
MICA, N2IS, TEAM
Revue Scientifique : Journal of Micromechanics and Microengineering, Vol.22, N°6, 065006p., Juin 2012 , N° 12133
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127118A.GHANNAM, L.OURAK, D.BOURRIER, C.VIALLON, T.PARRA
MOST, TEAM
Manifestation avec acte : Electronic Components and Technology Conference (ECTC 2012), San Diego (USA), 29 Mai - 1 Juin 2012, 5p. , N° 12440
Lien : http://hal.archives-ouvertes.fr/hal-00720570
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This work presents a new and low cost multi-level 3D copper interconnect process for RF and microwave applications. This process extends 3D interconnect integration technologies from silicon to above-IC polymer. Therefore, 3D passive devices and multi-level interconnects can be integrated using a single electroplating step making the process suitable for 3D-MMIC integration. 3D interconnects are realized by patterning the SU-8 to specific locations to create the desired 3D shape. A 3D seed layer is deposited above the SU-8 and the substrate to insure 3D electroplating current flow. The BPN is used as a thick mold for copper electroplating with an aspect ratio as high as 16:1. An optimized electroplating process is later used to grow copper in a 3D technique, insuring transition between all metallic layers. Finally, high-Q (60 @ 6 GHz) power inductors have been designed and integrated above a 50 W RF power LDMOS device, using this process.
B.REIG, V.BARDINAL, T.CAMPS, Y.BOUCHER, C.LEVALLOIS, J.B.DOUCET, D.BOURRIER, E.DARAN, J.LAUNAY
N2IS, UEB, INSA Rennes, TEAM, MICA
Manifestation avec acte : Photonics Europe 2012, Bruxelles (Belgique), 16-19 Avril 2012, 11p. , N° 12148
Lien : http://hal.archives-ouvertes.fr/hal-00725891
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We report on a simple method for the collective fabrication of polymer tunable microlens arrays suitable for VCSEL active beam shaping. Its principle is based on a SU-8 suspended membrane, surmounted by a polymer microlens, and thermally actuated to achieve a vertical displacement of lens plane. SU-8 resist presents many advantages for MOEMS fabrication, as this resist allows for high aspect ratio patterns and high transparency. In addition, it exhibits a thermal expansion coefficient suitable for thermal actuation. Moreover, this kind of polymer MOEMS can be fabricated on VCSEL arrays with footprints as low as 500x500 µm² enabling a rapid, low cost and wafer-scale integration technology. We have successfully fabricated this MOEMS on a glass substrate by means of a SU-8 double exposure method and we report on a vertical displacement of 8 µm under an applied power of 43mW (3V). A good agreement with the theoretical thermo-mechanical behavior is found. Moreover, optical measurements of microlens focus displacement under actuation are presented. We evaluate analytically the focus properties of the system under coherent laser illumination, using the classical ABCD matrix formalism of Gaussian transformation optics. The same approach enables one to assess its tolerance to opto-geometrical parameters, such as refractive index or dioptre curvature. As a wide range of initial gaps between the membrane and the substrate can be chosen, this MOEMS technology opens new insights for dynamic control of VCSEL beam or for tunable VCSELs fabrication.
V.N.PHAN, P.JOSEPH, L.DJEGHLAF, A.ALLOUCH, D.BOURRIER, P.ABGRALL, A.M.GUE, C. YANG, N-T. NGUYEN
NTU, Nanyang, N2IS, TEAM
Revue Scientifique : Heat Transfer Engineering, Vol.32, N°7-8, pp.624-635, Novembre 2011 , N° 10442
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125822A.GHANNAM, L.OURAK, D.BOURRIER, C.VIALLON, T.PARRA
MOST, TEAM
Manifestation avec acte : European Solid-State Device Research Conference (ESSDERC 2011), Helsinki (Finlande), 12-16 Septembre 2011, 4p. , N° 11522
Lien : http://hal.archives-ouvertes.fr/hal-00627894/fr/
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This paper presents a novel and efficient low cost process capable of integrating high-Q above-IC inductors and their interconnects using a single electroplating step. It relies on the SU8 and BPN resist as well as an optimized electroplating technique to form the 3D interconnected inductor. The SU8 is used to form a thick layer located underneath the inductor to elevate it from the substrate. Then, the BPN is used as a high resolution mold (16:1) for copper electroplating. Standard or time optimized electroplating is later used to grow copper in a 3D manner, making the transition between all metallic layers straight forward. High-Q (55 @ 5 GHz) power inductors have been designed and integrated above an RF power LDMOS device using this process. Finally, the process capabilities are demonstrated by integrating a solenoid inductor using only two lithography masks and a single electroplating step.
P.ARTILLAN, M.BRUNET, D.BOURRIER, J.P.LAUR, N.MAURAN, L.BARY, M.DILHAN, B.ESTIBALS, C.ALONSO, J.L.SANCHEZ
TEAM, ISGE, 2I
Revue Scientifique : IEEE Transactions on Power Electronics, Vol.26, N°8, pp.2319-2325, Août 2011 , N° 10568
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