197documents trouvés
MEMS IC concept for reconfigurable low noise amplifier
J.P.BUSQUERE, K.GRENIER, D.DUBUC, E.FOURN, P.ANCEY, R.PLANA
ST Microelectronics, MINC
Manifestation avec acte : 36th European Microwave Conference (EuMC'2006), Manchester (GB), 10-15 Septembre 2006, 4p. , N° 06692
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1081853D-BCB based branchline coupler for K-band integrated microsystem
M.N.DO, D.DUBUC, K.GRENIER, L.BARY, L.MAZENQ, R.PLANA
MINC, 2I, TEAM
Manifestation avec acte : 36th European Microwave Conference (EuMC'2006), Manchester (GB), 10-15 Septembre 2006, 4p. , N° 06648
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Abstract
This paper presents an analytical design methodology for 3D broadside couplers using new concept of compensation by coupled lines at both ends of a main coupler section. This compensation technique introduces a degree of freedom in the design which can enhance the compactness or the isolation of the coupler. Simulations have been performed and good agreement with the analytical analysis is observed. Two demonstrators have been then optimized and demonstrate a size reduction of 50% or a 10dB isolation improvement depending on the compensation scheme followed.
Experimental determination of microwave attenuation and electrical permitivity of double-walled carbon nanotubes
M.DRAGOMAN, K.GRENIER, D.DUBUC, L.BARY, E.FOURN, R.PLANA, E.FLAHAUT
MINC, 2I, CIRIMAT
Revue Scientifique : Applied Physics Letters, Vol.88, N°15, p.153108, 10 Avril 2006 , N° 06412
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Abstract
The attenuation and the electrical permittivity of the double-walled carbon nanotubes (DWCNTs) were determined in the frequency range of 165 GHz. A micromachined coplanar waveguide transmission line supported on a Si membrane with a thickness of 1.4 µm was filled with a mixture of DWCNTs. The propagation constants were then determined from the S parameter measurements. The DWCNTs mixture behaves like a dielectric in the range of 165 GHz with moderate losses and an abrupt change of the effective permittivity that is very useful for gas sensor detection.
Microwave and millimeter-wave devices based on carbon nanotubes
M.DRAGOMAN, E.FLAHAUT, D.DUBUC, K.GRENIER, R.PLANA
IMT, CIRIMAT, CISHT, MINC
Conférence invitée : 4th ESA Workshop on Millimetre-wave Applications, Espoo (Finlande), 15-17 Février 2006 (Résumé) , N° 06108
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105975Failure predictive model of capacitive RF-MEMS
S.MELLE, D.DE CONTO, L.MAZENQ, D.DUBUC, B.POUSSARD, C.BORDAS, K.GRENIER, L.BARY, O.VENDIER, J.L.MURARO, J.L.CAZAUX, R.PLANA
CISHT, TEAM, 2I, ALCATEL ESPACE
Revue Scientifique : Microelectronics Reliability, Vol.45, N°9-11, pp.1770-1775, Septembre-Novembre 2005 , N° 05495
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104829Reliability modeling of capacitive RF MEMS
S.MELLE, D.DE CONTO, D.DUBUC, K.GRENIER, O.VENDIER, J.L.MURARO, J.L.CAZAUX, R.PLANA
CISHT, ALCATEL ESPACE
Revue Scientifique : IEEE Transaction on Microwave Theory and Techniques, Vol.53, N°11, pp.3482-3488, Novembre 2005 , N° 05204
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105231Failure predictive model of capacitive RF-MEMS
S.MELLE, D.DE CONTO, L.MAZENQ, D.DUBUC, B.POUSSARD, C.BORDAS, K.GRENIER, L.BARY, O.VENDIER, J.L.MURARO, J.L.CAZAUX, R.PLANA
CISHT, TEAM, 2I, ALCATEL ESPACE
Manifestation avec acte : 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF'2005), Arcachon (France), 10-14 Octobre 2005 , N° 05495
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104828MEMS-IC integration for RF and millimeterwave applications
D.DUBUC, W.DE RAEDT, G.CARCHON, M.N.DO, E.FOURN, K.GRENIER, R.PLANA
CISHT, IMEC
Manifestation avec acte : 35th European Microwave Conference (EuMC'2005), Paris (France), 4-6 Octobre 2005, pp.1475-1478 , N° 05496
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105187High Q-factor of coplanar waveguide on low-k polymer layer
F.BOUCHRIHA, D.DUBUC, D.BOURRIER, L.BARY, R.PLANA, K.GRENIER
CISHT, TEAM, 2I
Manifestation avec acte : 35th European Microwave Conference (EuMC'2005), Paris (France), 4-6 Octobre 2005, pp.1411-1414 , N° 05132
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105186IC compatible MEMS technology
K.GRENIER, L.MAZENQ, D.DUBUC, F.BOUCHRIHA, F.COCCETTI, E.OJEFORS, P.LINDBERG, A.RYDBERG, J.BERNTGEN, W.J.RABE, E.SONMEZ, P.ABELE, H.SCHUMACHER, R.PLANA
TEAM, Uppsala, CISHT, Atmel, ULM
Manifestation avec acte : 13th Gallium Arsenide and other Compound Semiconductors Application Symposium (GaAs'2005), Paris (France), 3-4 Octobre 2005, pp.293-296 , N° 05375
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