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TEM evaluation of strain and stress in III-V semiconductor epitaxial structures

A.ROCHER, M.CABIE, A.PONCHET, A.ARNOULT, E.BEDEL-PEREIRA

CEMES/CNRS, PH, TEAM

Manifestation avec acte : E-MRS 2003 Fall Meeting, Varsovie (Pologne), 15-19 Septembre 2003, 8p. , N° 03653

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Effect of nitrogen fraction on the temperature dependence of GaNAs/GaAs quantum well emission

R.J.POTTER, N.BALKAN, H.CARRERE, A.ARNOULT, E.BEDEL-PEREIRA, X.MARIE

INSA-LPMC, PH, TEAM, Essex

Revue Scientifique : Applied Physics Letters, Vol.82, N°20, pp.3400-3402, 15 Mai 2003 , N° 03662

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I(V) study of spin-polarized tunneling by thermally excited electrons in GaAs/Co-based junctions and spin-LEDs

J.F.BOBO, C.COUDERC, A.ARNOULT, C.FONTAINE, R.MAMY

LPMC Toulouse, PH, TEAM

Rapport LAAS N°03354, Mai 2003, 9p.

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Resonant Raman scattering in GaAsN: mixing, localization and band impurity formation of electronic states

G.BACHELIER, A.MLAYAH, M.CAZAYOUS, J.GROENEN, A.ZWICK, H.CARRERE, E.BEDEL-PEREIRA, A.ARNOULT, A.ROCHER, A.PONCHET

LPS, PH, CEMES/CNRS, TEAM

Revue Scientifique : Physical Review B, Article 205325, Vol.67, N°20, 6p., Mai 2003 , N° 02535

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GaAsN and GaInAsN/GaAs quantum wells grown on (111) substrates: growth conditions and optical properties

S.BLANC, A.ARNOULT, H.CARRERE, C.FONTAINE

PH, TEAM

Revue Scientifique : Physica E, Vol.17, N°1-4, pp.252-254, Avril 2003 , N° 03467

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Band structure and optical gain in GaInAsN quantum wells

H.CARRERE, A.ARNOULT, X.MARIE, C.AMAND, E.BEDEL-PEREIRA, R.J.POTTER, N.BALKAN

PH, INSA-LPMC, INSAT, Essex, TEAM

Revue Scientifique : Physica E, Vol.17, N°1-4, pp.245-246, Avril 2003 , N° 02474

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Interest of the (111) orientation for GaAsN and GaInAsN/GaAs quantum wells grown by molecular beam epitaxy

S.BLANC, A.ARNOULT, H.CARRERE, C.FONTAINE

TEAM, PH

Revue Scientifique : Solid-State Electronics, Issue 3, Vol.47, pp.395-398, Mars 2003 , N° 03337

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Nitrogen plasma study for plama-assisted MBE growth of 1.3 um laser diodes

H.CARRERE, A.ARNOULT, A.RICARD, X.MARIE, C.AMAND, E.BEDEL-PEREIRA

PH, CPAT-UPS, INSA-LPMC, TEAM

Revue Scientifique : Solid-State Electronics, Vol.47, N°3, pp.419-424, Mars 2003 , N° 02472

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Comparison between dilute nitrides grown on (111) and (100) GaAs substrates: N incorporation and quantum well optical properties

S.BLANC, A.ARNOULT, H.CARRERE, E.BEDEL-PEREIRA, G.LACOSTE, C.FONTAINE, M.CABIE, A.PONCHET, A.ROCHER

TEAM, CEMES/CNRS, PH

Revue Scientifique : IEE Proceedings Optoelectronics, Vol.150, N°1, pp.64-67, Février 2003 , N° 02465

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Time resolved PL study of GaInNAs quantum wells

R.J.POTTER, N.BALKAN, X.MARIE, M.SERIES, H.CARRERE, A.ARNOULT, C.FONTAINE

Essex, INSA-LPMC, PH, TEAM

Revue Scientifique : IEE Proceedings in Optoelectronics, Vol.150, N°1, pp.75-76, Février 2003 , N° 03659

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