132documents trouvés
Structure determination of clusters formed in ultra-low energy high-dose implanted silicon
N.CHERKASHIN, M.HYTCH, F.CRISTIANO, A.CLAVERIE
CEMES/CNRS, TMN
Manifestation avec acte : XIth International Conference on Gettering And Defect Engineering in Semiconductor Technology (GADEST'2005), Gien (France), 25-30 Septembre 2005, 6p. , N° 05545
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104703Combined master and Fokker-Planck equations for the modeling of the kinetics of extended defects in Si
E.LAMPIN, C.J.ORTIZ, N.E.B.COWERN, B.COLOMBEAU, F.CRISTIANO
IEMN Villeneuve, Fraunhofer Erlangen, Surrey, TMN
Revue Scientifique : Solid State Electronics, Vol.49, N°7, pp.1168-1171, Juillet 2005 , N° 05543
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104700Effect of fluorine on the activation and diffusion behaviour of boron implanted preamorphized silicon
S.PAUL, W.LERCH, B.COLOMBEAU, N.E.B.COWERN, F.CRISTIANO, S.BONINELLI, D.BOLZE
Mattson, Surrey, CEMES/CNRS, IHP, M2D
Manifestation avec acte : 8th International Workshop on the Fabrication, Characterization and Modelling of Ultra Shallow Junctions in Semiconductors, Daytona Beach (USA), 5-8 Juin 2005, 7p. , N° 05546
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104705Mechanisms of B deactivation control by F co-implantation
N.E.B.COWERN, B.COLOMBEAU, J.BENSON, A.J.SMITH, W.LERCH, S.PAUL, T.GRAF, F.CRISTIANO, X.HEBRAS, D.BOLZE
Surrey, Mattson, TMN, IHP
Revue Scientifique : Applied Physics Letters, Vol.86, N°10, p.101905, Mars 2005 , N° 05542
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104698Crystal damage removal by spike and flash annealing
W.LERCH, S.PAUL, J.NIESS, S.McCOY, J.GELPEY, F.CRISTIANO, S.BONINELLI, O.MARCELOT, P.F.FAZZINI, R.DUFFY
Mattson, Mattson Technology, M2D, CEMES/CNRS, Philips Leuven
Revue Scientifique : Electrochemical Transactions, Vol.3, N°2, pp.77--, 2005 , N° 06882
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112951Modeling of extrinsic extended defect evolution in ion-implanted silicon upon thermal annealing
C.J.ORTIZ, F.CRISTIANO, B.COLOMBEAU, A.CLAVERIE, N.E.B.COWERN
Fraunhofer Erlangen, TMN, Surrey, CEMES/CNRS
Revue Scientifique : Materials Science and Engineering B, Vol.114-115, pp.184-192, Décembre 2004 , N° 04114
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104868Thermal stability of boron electrical activation in preamorphised ultra-shallow junctions
F.CRISTIANO, N.CHERKASHIN, P.CALVO, Y.LAMRANI, X.HEBRAS, A.CLAVERIE, W.LERCH, S.PAUL
Fraunhofer Erlangen, TMN, Surrey, CEMES/CNRS, Mattson
Revue Scientifique : Materials Science and Engineering B, Vol.114-115, pp.174-179, Décembre 2004 , N° 04785
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104870Electrical deactivation and diffusion of boron in preamorphizes ultrashallow junctions: interstitial transport and F co-implant control
B.COLOMBEAU, A.J.SMITH, N.E.B.COWERN, W.LERCH, S.PAUL, B.PAWLAK, F.CRISTIANO, X.HEBRAS, D.BOLZE, C.J.ORTIZ, P.PICHLER
Surrey, Mattson, Philips Leuven, TMN, IHP, Fraunhofer Erlangen
Manifestation avec acte : 2004 IEEE International Electron Devices Meeting (IEDM'2004), San Francisco (USA), 13-15 Décembre 2004, 4p. , N° 04787
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104874On the modeling of transient diffusion and activation of boron during post-implantation annealing
P.PICHLER, C.J.ORTIZ, B.COLOMBEAU, N.E.B.COWERN, E.LAMPIN, A.CLAVERIE, F.CRISTIANO, W.LERCH, S.PAUL
Fraunhofer Erlangen, Surrey, IEMN Villeneuve, CEMES/CNRS, TMN, Mattson
Manifestation avec acte : 2004 IEEE International Electron Devices Meeting (IEDM'2004), San Francisco (USA), 13-15 Décembre 2004, 4p. , N° 04788
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104876A physical based model for the spatial and temporal evolution of self-interstitial agglomerates in ion-implanted silicon
C.J.ORTIZ, P.PICHLER, T.FUHNER, F.CRISTIANO, B.COLOMBEAU, N.E.B.COWERN, A.CLAVERIE
Fraunhofer Erlangen, TMN, Surrey, CEMES/CNRS
Revue Scientifique : Journal of Applied Physics, Vol.96, N°9, pp.4866-4877, Novembre 2004 , N° 04786
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