132documents trouvés
Defects evolution and dopant activation anomalies in ion implanted silicon
F.CRISTIANO, Y.LAMRANI, F.SEVERAC, M.GAVELLE, S.BONINELLI, N.CHERKASHIN, O.MARCELOT, A.CLAVERIE, W.LERCH, S.PAUL, N.E.B.COWERN
M2D, CEMES/CNRS, Mattson, Surrey
Conférence invitée : E-MRS 2006 Spring Meeting, Nice (France), 29 Mai - 2 Juin 2006, 39p. , N° 06885
Diffusable
108965Transformation of (113) defects into dislocation loops mediated by a novel rod-like defect
S.BONINELLI, N.CHERKASHIN, A.CLAVERIE, F.CRISTIANO
CEMES/CNRS, M2D
Manifestation avec acte : E-MRS 2006 Spring Meeting, Nice (France), 29 Mai - 2 Juin 2006, 13p. , N° 06883
Diffusable
108960Defects evolution and dopan activation anomalies in ion implanted silicon
F.CRISTIANO, Y.LAMRANI, F.SEVERAC, M.GAVELLE, S.BONINELLI, N.CHERKASHIN, O.MARCELOT, A.CLAVERIE, W.LERCH, S.PAUL, N.E.B.COWERN
M2D, CEMES/CNRS, Mattson, Surrey
Conférence invitée : Materials Research Society Spring Meeting 2006, San Francisco, 17-21 Avril 2006 (Résumé) , N° 06884
Diffusable
108963Effect of fluorine on the activation and diffusion behaviour of boron implanted preamorphized silicon
S.PAUL, W.LERCH, B.COLOMBEAU, N.E.B.COWERN, F.CRISTIANO, S.BONINELLI, D.BOLZE
Mattson, Surrey, CEMES/CNRS, IHP, M2D
Revue Scientifique : Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol.24, N°1, pp.437-441, Janvier/Février 2006 , N° 05546
Diffusable
108866Structure determination of clusters formed in ultra-low energy high-dose implanted silicon
N.CHERKASHIN, M.HYTCH, F.CRISTIANO, A.CLAVERIE
CEMES/CNRS, TMN
Revue Scientifique : Solid State Phenomena, Vol.108-109, pp.303-305, Décembre 2005 , N° 05545
Diffusable
117750Deactivation of solid phase epitaxy-activated boron ultrashallow junctions
W.LERCH, S.PAUL, J.NIESS, F.CRISTIANO, Y.LAMRANI, P.CALVO, N.CHERKASHIN, D.F.DOWNEY, E.A.AREVALO
Mattson, TMN, CEMES/CNRS, Varian
Revue Scientifique : Journal of the Electrochemical Society, Vol.152, N°10, pp.G787-G793, 2005 , N° 05711
Diffusable
105609Optimisation of the parameters of an extended defect model applied to non-amorphizing implants
E.LAMPIN, F.CRISTIANO, Y.LAMRANI, D.CONNETABLE
IEMN Villeneuve, TMN
Revue Scientifique : Materials Science and Engineering: B, Vol.124-125, pp.397-400, 2005 , N° 05544
Diffusable
105601Advanced activation of ultra-shallow junctions using flash-assisted RTP
W.LERCH, S.PAUL, J.NIESS, S.McCOY, T.SELINGER, J.GELPEY, F.CRISTIANO, F.SEVERAC, M.GAVELLE, S.BONINELLI, P.PICHLER, D.BOLZE
Mattson, Mattson Technology, TMN, CEMES/CNRS, Fraunhofer Erlangen, IHP
Revue Scientifique : Materials Science and Engineering: B, Vol.124-125, pp.24-31, 2005 , N° 05541
Diffusable
105606Advanced activation and stability of ultra-shallow junctions using flash-assisted RTP
J.GELPEY, S.McCOY, W.LERCH, S.PAUL, J.NIESS, F.CRISTIANO, D.BOLZE
Mattson Technology, Mattson, M2D, IHP
Manifestation avec acte : 13th International Conference on Advanced Thermal Processing of Semiconductors (RTP'2005), Santa Barbara (USA), 4-7 Octobre 2005, pp.73-83 , N° 05751
Diffusable
109361Measurement of Si 311 defect properties using x-ray scattering
K.NORDLUND, T.H.METZGER, A.MALACHIAS, L.CAPELLO, P.CALVO, A.CLAVERIE, F.CRISTIANO
University Helsinki, ESRF, CEMES/CNRS, TMN
Revue Scientifique : Journal of Applied Physics, Vol.98, N°7, pp.073529.1-073529.5, 1 Octobre 2005 , N° 05540
Diffusable
105607