132documents trouvés
High dose implantation impact on the carrier mobility in ultra-thin unstrained and strained SOI films
C.DUPRE, P.F.FAZZINI, T.ERNST, F.CRISTIANO, J.M.HARTMANN, A.CLAVERIE, F.ANDRIEU, O.FAYNOT, P.RIVALLIN, F.LAUGIER, G.GHIBAUDO, S.CRISTOLOVEANU, S.DELEONIBUS
M2D, CEA, CEMES/CNRS, IMEP-ENSERG
Revue Scientifique : Electrochemical Transactions, Vol.6, N°4, pp.33--, 2007 , N° 07055
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112952Defects evolution and dopant activation anomalies in ion implanted silicon
F.CRISTIANO, Y.LAMRANI, F.SEVERAC, M.GAVELLE, S.BONINELLI, N.CHERKASHIN, O.MARCELOT, A.CLAVERIE, W.LERCH, S.PAUL, N.E.B.COWERN
M2D, CEMES/CNRS, Mattson, Surrey
Revue Scientifique : Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms, Vol.253, N°1-2, pp.68-79, Décembre 2006 , N° 06885
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108966Transformation of (113) defects into dislocation loops mediated by a novel rod-like defect
S.BONINELLI, N.CHERKASHIN, A.CLAVERIE, F.CRISTIANO
CEMES/CNRS, M2D
Revue Scientifique : Nuclear Instruments and Methods in Physics Research B: Beam Interactions with Materials and Atoms, Vol.253, N°1-2, pp.80-84, Décembre 2006 , N° 06883
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108961Deactivation of ultrashallow boron implants in preamorphized silicon fter nonmelt laser annealing with multiple scans
J.A.SHARP, N.E.B.COWERN, R.P.WEBB, J.KIRKBY, D.GIUBERTONI, S.GENNARO, M.BERSANI, M.A.FOAD, F.CRISTIANO, P.F.FAZZINI
Surrey, ITC, Applied, M2D
Revue Scientifique : Applied Physics Letters, Vol.89, N°19, p.192105, Novembre 2006 , N° 06900
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109166Crystal damage removal by spike and flash annealing
W.LERCH, S.PAUL, J.NIESS, S.McCOY, J.GELPEY, F.CRISTIANO, S.BONINELLI, O.MARCELOT, P.F.FAZZINI, R.DUFFY
Mattson, Mattson Technology, M2D, CEMES/CNRS, Philips Leuven
Manifestation avec acte : 210th Meeting of the Electrochemical Society, Cancun (Mexique), 29 Octobre - 3 Novembre 2006, 8p. , N° 06882
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108958Evidences of F-induced nanobubbles as sink for self-interstitials in Si
S.BONINELLI, A.CLAVERIE, G.IMPELLIZZERI, S.MIRABELLA, F.PRIOLO, E.NAPOLITANI, F.CRISTIANO
CEMES/CNRS, MATIS Catania, MATIS Padova, M2D
Revue Scientifique : Applied Physics Letters, Vol.89, N°17, p.171916, Octobre 2006 , N° 06901
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109164Evidences of an intermediate rodlike defect during the transformation of (113) defects into dislocation loops
S.BONINELLI, N.CHERKASHIN, A.CLAVERIE, F.CRISTIANO
CEMES/CNRS, M2D
Revue Scientifique : Applied Physics Letters, Vol.89, N°16, p.161904, Octobre 2006 , N° 06902
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109170Effect of voids-controlled vacancy supersaturations on B diffusion
O.MARCELOT, A.CLAVERIE, F.CRISTIANO, F.CAYREL, D.ALQUIER, W.LERCH, S.PAUL, L.RUBIN, H.JAOUEN, C.ARMAND
CEMES/CNRS, M2D, LMP, Mattson, Axcelis Technologies, ST Microelectronics, INSAT
Manifestation avec acte : 15th International Conference on Ion Beam Modification of Materials, Taormina (Italie), 18-22 Septembre 2006, 11p. , N° 06260
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Abstract
We present here preliminary results on boron diffusion in presence of pre-formed voids of different characteristics. The voids were fabricated by helium implantation followed by annealing allowing the desorption of He prior to boron implantation. We show that under such conditions boron diffusion is always largely reduced and can even be suppressed in some cases. Boron diffusion suppression can be observed in samples not containing nanovoids in the boron-rich region. It is suggested that direct trapping of Si(int)s by the voids is not the mechanism responsible for the reduction of boron diffusion in such layers. Alternatively, our experimental results suggest that this reduction of diffusivity is more probably due to the competition between two Ostwald ripening phenomena taking place at the same time: in the boron-rich region, the competitive growth of extrinsic defects at the origin of TED and, in the void region, the Ostwald ripening of the voids which involves large supersaturations of Vs.
Mots-Clés / Keywords
Diffusion of impurities; Defects and impurities; Voids; Vacancies; Impurities implantation;
Diffusion and activation of dopants in silicon and advanced silicon-based materials
P.PICHLER, C.J.ORTIZ, B.COLOMBEAU, N.E.B.COWERN, E.LAMPIN, S.UPPAL, M.S.A.KARUNARATNE, J.M.BONAR, A.F.W.WILLOUGHBY, A.CLAVERIE, F.CRISTIANO, W.LERCH, S.PAUL
Fraunhofer Erlangen, Surrey, IEMN Villeneuve, Southampton, CEMES/CNRS, Mattson, M2D
Revue Scientifique : Physica Scripta, Vol.T126, pp.89-96, Septembre 2006 , N° 05539
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108867Fluorine-vacancy complexes in ultrashallow B-implanted Si
D.A.ABDULMALIK, G.COLEMAN, N.E.B.COWERN, A.J.SMITH, B.J.SEALY, W.LERCH, S.PAUL, F.CRISTIANO
Bath, Surrey, Mattson, M2D
Revue Scientifique : Applied Physics Letters, Vol.89, N°5, p.052114, Juillet 2006 , N° 06899
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