132documents trouvés
Ion beam induced defects in crystalline silicon
F.CRISTIANO, N.CHERKASHIN, X.HEBRAS, P.CALVO, Y.LAMRANI, E.SCHEID, B.DE MAUDUIT, B.COLOMBEAU, W.LERCH, S.PAUL, A.CLAVERIE
TMN, CEMES/CNRS, Surrey, Mattson
Revue Scientifique : Nuclear Instruments and Methods in Physics Research B, Vol.B 216, pp.46-56, 2004 , N° 04044
Diffusable
101796Thermal evolution of (113) defects in silicon: transformation against dissolution
P.CALVO, A.CLAVERIE, N.CHERKASHIN, B.COLOMBEAU, Y.LAMRANI, B.DE MAUDUIT, F.CRISTIANO
CEMES/CNRS, Surrey, TMN
Revue Scientifique : Nuclear Instruments and Methods in Physics Research B, Vol.B 216, pp.173-177, 2004 , N° 04045
Diffusable
101794Direct evidence of the recombination of silicon interstitial atoms at the silicon surface
Y.LAMRANI, F.CRISTIANO, B.COLOMBEAU, E.SCHEID, P.CALVO, H.SCHAFER, A.CLAVERIE
TMN, Surrey, CEMES/CNRS, INFINEON
Revue Scientifique : Nuclear Instruments and Methods in Physics Research B, Vol.B 216, pp.281-285, 2004 , N° 04046
Diffusable
101795Depth dependence of defect evolution and TED during annealing
B.COLOMBEAU, N.E.B.COWERN, F.CRISTIANO, P.CALVO, Y.LAMRANI, N.CHERKASHIN, E.LAMPIN, A.CLAVERIE
Surrey, TMN, CEMES/CNRS, IEMN Villeneuve
Revue Scientifique : Nuclear Instruments and Methods in Physics Research B, Vol.B 216, pp.90-94, 2004 , N° 04043
Diffusable
101797Clusters formation in ultra-low energy high-dose boron implanted silicon
F.CRISTIANO, X.HEBRAS, N.CHERKASHIN, A.CLAVERIE, W.LERCH, S.PAUL
CEMES/CNRS, Mattson, TMN
Revue Scientifique : Applied Physics Letters, Vol.83, N°26, pp.5407-5409, 29 Décembre 2003 , N° 03588
Diffusable
101652Prediction of boron transient enhanced diffusion through the atom-by-atom modeling of extended defects
E.LAMPIN, F.CRISTIANO, Y.LAMRANI, A.CLAVERIE, B.COLOMBEAU, N.E.B.COWERN
IEMN Villeneuve, TMN, CEMES/CNRS, Surrey
Revue Scientifique : Journal of Applied Physics, Vol.94, N°12, pp.7520-7525, 15 Décembre 2003 , N° 03587
Diffusable
101650Extended defects in shallow implants
A.CLAVERIE, B.COLOMBEAU, B.DE MAUDUIT, C.BONAFOS, X.HEBRAS, G.BEN ASSAYAG, F.CRISTIANO
CEMES/CNRS, TMN
Revue Scientifique : Applied Physics A, Vol.76, pp.1025-1033, 2003 , N° 01620
Diffusable
101646Report on the modeling of defect evolution and dopant diffusion during annealing: application to ultra-shallow junctions
F.CRISTIANO, A.CLAVERIE
TMN, CEMES/CNRS
Rapport de Contrat : Programme Nano 2008, Décembre 2003, 21p. , N° 03629
Non diffusable
102008Dopant segregation on cavities induced by helium implantation: impact of the doping level
F.CAYREL, L.VINCENT, D.ALQUIER, F.CRISTIANO, L.VENTURA, C.DUBOIS, A.CLAVERIE
ST, CEMES/CNRS, LMP, TMN, LPM/INSA
Manifestation avec acte : 10th Gettering and Defect Engineering in Semiconductor Technology (GADEST'2003), Zeuthen (Allemagne), 21-26 Septembre 2003, 7p. , N° 03589
Diffusable
101655Time evolution of the depth profile of (113) defects during transient enhanced diffusion in silicon
B.COLOMBEAU, N.E.B.COWERN, F.CRISTIANO, P.CALVO, N.CHERKASHIN, Y.LAMRANI, A.CLAVERIE
Surrey, TMN, CEMES/CNRS
Revue Scientifique : Applied Physics Letters, Vol.83, N°10, pp.1953-1955, 8 Septembre 2003 , N° 03586
Diffusable
101648