50documents trouvés
Exploring potentials and performance of two circuit architectures to develop a new integrated switch dedicated to self-switching power converters (U)
F.CAPY, M.BREIL, F.RICHARDEAU, J.P.LAUR, A.BOURENNANE, J.L.SANCHEZ
ISGE, LAPLACE
Manifestation avec acte : European Conference on Power Electronics and Applications (EPE 2009), Barcelone (Espagne), 8-10 Septembre 2009, 8p. , N° 09080
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119398New self-controlled and self-protected IGBT based integrated switch
F.CAPY, J.P.LAUR, M.BREIL, F.RICHARDEAU, M.BRUNET, E.IMBERNON, A.BOURENNANE, C.CARAMEL, P.AUSTIN, J.L.SANCHEZ
ISGE, LAPLACE, TEAM
Manifestation avec acte : 21st International Symposium on Power Semiconductor Devices and ICs (ISPSD'09), Barcelone (Espagne), 14-17 Juin 2009, pp.243-246 , N° 09079
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Abstract
In this paper, we present the realization of a new self-controlled integrated power switch dedicated to selfswitching mode power converters. To achieve this function, an original topology based on an IGBT is proposed. Its operating modes are analyzed using 2D physical simulation. To realize this new power switch, a technological process compatible with the IGBT process and with 3D capacitors realization is proposed.
Potentialities of silicon piezoresistivity for mechanical state monitoring of VDMOS transistors
E.MARCAULT, M.BREIL, P.TOUNSI, J.M.DORKEL, A.BOURENNANE, J.B.SAUVEPLANE
ISGE
Manifestation avec acte : MIXDES 2009, Lodz (Pologne), 25-27 Juin 2009, 5p. , N° 09167
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117983A current and voltage bidirectional IGBT based on a Si/Si wafer bonding technique
H.TAHIR, A.BOURENNANE, J.L.SANCHEZ, M.BREIL, P.AUSTIN
ISGE
Manifestation avec acte : 9th International Seminar on Power Semiconductors (ISPS'08), Prague (République Tchèque), 27-29 Août 2008, 7p. , N° 08760
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116476Evolution of an integrated short-circuits protection structure: specific design of a LDMOS transistor
J.LE GAL, C.CARAMEL, A.BOURENNANE, P.AUSTIN, J.L.SANCHEZ, M.BREIL, J.SAIZ, M.MERMET-GUYENNET, E.IMBERNON
ISGE, ALSTOM Transport, PEARL
Manifestation avec acte : 9th International Seminar on Power Semiconductors (ISPS'08), Prague (République Tchèque), 27-29 Août 2008 , N° 08502
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Mots-Clés / Keywords
Integration power devices; Protection structure; LDMOS transistor;
New self-controlled and self-protected integrated power switch
F.CAPY, M.BREIL, F.RICHARDEAU, A.BOURENNANE, J.P.LAUR, J.L.SANCHEZ
ISGE, LAPLACE
Manifestation avec acte : 9th International Seminar on Power Semiconductors (ISPS'08), Prague (République Tchèque), 27-29 Août 2008, 6p. , N° 08410
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Mots-Clés / Keywords
Power functional integration; Self-switching; MOS-thyristor;
Simulation based analysis of a monolithically integrated fast and slow IGBT structure (U)
J.LE GAL, R.DE MAGLIE, C.CARAMEL, A.BOURENNANE, P.AUSTIN, J.L.SANCHEZ, J.P.LAUR, D.FLORES, J.MILLAN, J.REBOLLO
ISGE, Université de Barcel
Manifestation avec acte : 12th European Conference on Power Electronics and Applications (EPE 2007), Aalborg (Danemark), 2-5 Septembre 2007, 10p. , N° 07651
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Mots-Clés / Keywords
IGBT; Functional integration;
Evolution of the classical functional integration towards a 3D heterogeneous functional integration
J.L.SANCHEZ, A.BOURENNANE, M.BREIL, P.AUSTIN, M.BRUNET, J.P.LAUR
ISGE
Conférence invitée : 14th International Conference Mixed Design of Integrated Circuits and Systems, Ciechocinek (Pologne), 21-23 Juin 2007, 11p. , N° 07344
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Abstract
This paper presents a brief overview of the monolithic integration in the field of power electronics. Emphasis is mainly put on the functional integration concept. The role that this mode of integration, according to its classical definition, played to enable the monolithic integration of the power device with auxiliary elements (mainly protections and supply) for the realization of new functions dedicated for medium power applications is highlighted. At that end, some of the recent realizations are described in order to showcase some of the potentialities of this mode of integration. Furthermore, to extend further the classical integration towards a 3D "heterogeneous" functional integration, an example that highlights the improvements that should be achieved at the devices level as well as at the devices environment level, for the development of new power integrated functions for ac applications, is discussed. The last part deals with the technology process evolution for the realization of the active devices as well as the passive elements. In this part, a flexible technological process and its importance in the development of more complex functions, implemented in 3D within the silicon die volume and at the surface, is described in more detail.
Mots-Clés / Keywords
Functional integration; 3D heterogeneous integration; Microfabrication techniques; Power integration;
Design of an integrated self-switching mode device for power converters
F.CAPY, A.BOURENNANE, M.BREIL, F.RICHARDEAU, E.IMBERNON, J.L.SANCHEZ, J.P.LAUR, P.AUSTIN
ISGE, LEEI, TEAM
Manifestation avec acte : 14th International Conference Mixed Design of Integrated Circuits and Systems, Ciechocinek (Pologne), 21-23 Juin 2007, 6p. , N° 07148
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Abstract
In this paper, we present a design procedure for the integration of a new specific function based on the association of a ZVS mode thyristor and a circuit breaker dedicated to self-switching mode power converters. This function, based on the functional integration concept, monolithically associates protection, self-drive and power switch functions. This function uses an original switching mode of operation. After presenting the characteristics of the function and the function specifications, we focus on the different design steps: function optimization and cells sizing using 2D electrical and technological simulations, and mask design.
Mots-Clés / Keywords
Power functional integration; ZVS mode thyristor-circuit breaker function; 2D numerical simulation; Design;
Structure bidirectionnelle en courant
A.BOURENNANE, I.MURA, J.L.SANCHEZ, F.RICHARDEAU, M.BREIL, P.AUSTIN
Pise, LEEI, ISGE
Revue Scientifique : Revue Internationale de Génie Electrique (RIGE), Vol.10, N°5, pp.553-565, 2007 , N° 06753
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Résumé
Nous analysons à partir de simulations 2D et 3D une structure qui intègre monolithiquement un IGBT à bandes parallèles et une diode PIN de conduction inverse. Par rapport à un IGBT classique, la face arrière de cette structure est constituée de régions dopées P+ et N+. Nous montrons à partir de la visualisation de la répartition des porteurs dans une structure, l'influence de la diffusion N+ face arrière sur la chute de tension à l'état passant. Les simulations ont été effectuées premièrement sur une seule cellule puis elles ont été réalisées sur un grand nombre de cellules en respectant le critère de rapport de surfaces N+/(N+ + P+) sur la face arrière. Dans cet article, l'application que nous visons concerne le cas où la diode intégrée assure la conduction durant un temps très court pendant la commutation.