146documents trouvés
Robust gan electronics for highly reliable BF and RF analog systems in aerospace applications
G.SOUBERCAZE PUN, J.G.TARTARIN, L.BARY, J.RAYSSAC, S.DELAGE, J.GRAFFEUIL
MOST, 2I, TRT, TIGER
Manifestation avec acte : CANEUS 2006, Toulouse (France), 27 Août - 1er Septembre 2006, 7p. , N° 06474
Diffusable
107581Compact lumped elements micromachined band-pass filters with discrete switching for 1.8/5.2 GHz applications
D.NECULOIU, A.MULLER, D.VASILACHE, I.PETRINI, C.BUICULESCU, A.TAKACS, R.MULLER, M.DASCALU, F.GIACOMOZZI, L.BARY, R.PLANA
IMT, ITC, 2I, MINC
Manifestation avec acte : 7th International Conference on RF MEMS and RF Microsystems, Orvieto (Italie), 27-30 Juin 2006, 4p. , N° 06852
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108843GaAs membrane-supported Yagi-Uda antenna 45 GHz receiver
A.STAVINIDRIS, A.MULLER, D.NECULOIU, G.KONSTANTINIDIS, D.VASILACHE, M.DRAGOMAN, I.PETRINI, C.BUICULESCU, Z.CHATZOPOULOS, L.BARY, R.PLANA
IMT, MRG FORTH, 2I, MINC
Manifestation avec acte : 7th International Conference on RF MEMS and RF Microsystems, Orvieto (Italie), 27-30 Juin 2006, 4p. , N° 06853
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108845Design of tunable MEMS filters for millimeter wave systems
A.TAKACS, D.NECULOIU, D.VASILACHE, A.MULLER, P.PONS, L.BARY, R.PLANA
MINC, 2I, IMT
Manifestation avec acte : 13th IEEE Mediterranean Electrotechnical Conference (MELECON'2006), Benalmadena (Espagne), 16-19 Mai 2006, 4p. , N° 06729
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108391Experimental determination of microwave attenuation and electrical permitivity of double-walled carbon nanotubes
M.DRAGOMAN, K.GRENIER, D.DUBUC, L.BARY, E.FOURN, R.PLANA, E.FLAHAUT
MINC, 2I, CIRIMAT
Revue Scientifique : Applied Physics Letters, Vol.88, N°15, p.153108, 10 Avril 2006 , N° 06412
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Plus d'informations
Abstract
The attenuation and the electrical permittivity of the double-walled carbon nanotubes (DWCNTs) were determined in the frequency range of 165 GHz. A micromachined coplanar waveguide transmission line supported on a Si membrane with a thickness of 1.4 µm was filled with a mixture of DWCNTs. The propagation constants were then determined from the S parameter measurements. The DWCNTs mixture behaves like a dielectric in the range of 165 GHz with moderate losses and an abrupt change of the effective permittivity that is very useful for gas sensor detection.
Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design
G.SOUBERCAZE PUN, J.G.TARTARIN, L.BARY, J.RAYSSAC, E.MORVAN, B.GRIMBERT, S.L.DELAGE, J.C.DE JAEGER, J.GRAFFEUIL
2I, ALCATEL THALES III-V, IEMN Villeneuve, THOMSON CSF-LCR, MOST
Rapport LAAS N°06139, Mars 2006, 4p.
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Plus d'informations
Abstract
Although GaN technologies were initially developed for solid state source amplifiers, it was recently demonstrated that AlGaN/GaN HEMT transistors were also suitable for low noise applications such as LNA. The frequency synthesis is not yet widely explored for these technologies. In this paper the design of a low phase noise X-Band oscillator is proposed. The low frequency noise performance and the residual phase noise, as well as dynamic S-parameters were carried out on AlGaN/GaN HEMT grown on SiC. A large-signal modeling technique is also presented. The reduced complexity and the good accuracy of our large signal model permits an efficient circuit design, without intensive knowledge of the technological device parameters. These characterization and modeling tools are used for the design of an 1-stage oscillator working at 10 GHz delivering 20dBm.
Utilisation du bruit basse fréquence comme indicateur de fiabilité de diodes. Application aux structures ZNER 1N4565
J.GRAFFEUIL, J.RAYSSAC, L.BARY
2I, MOST
Rapport de Contrat : Contrat CNES N° 4800000.242, Février 2006, 27p. , N° 06098
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105910Detailed study of BSIM3v3 flicker noise models in NMOS and PMOS transistors from threshold to saturation region
T.NOULIS, S.SISKOS, G.SARRABAYROUSE, L.BARY, H.HATZOPOULOS
Thessaloniki, TMN, 2I
Manifestation avec acte : XX Conference on Design of Circuits and Integrated Systems (DCIS'05), Lisbonne (Portugal), 23-25 Novembre 2005, 6p. , N° 05429
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105488Failure predictive model of capacitive RF-MEMS
S.MELLE, D.DE CONTO, L.MAZENQ, D.DUBUC, B.POUSSARD, C.BORDAS, K.GRENIER, L.BARY, O.VENDIER, J.L.MURARO, J.L.CAZAUX, R.PLANA
CISHT, TEAM, 2I, ALCATEL ESPACE
Revue Scientifique : Microelectronics Reliability, Vol.45, N°9-11, pp.1770-1775, Septembre-Novembre 2005 , N° 05495
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104829Failure predictive model of capacitive RF-MEMS
S.MELLE, D.DE CONTO, L.MAZENQ, D.DUBUC, B.POUSSARD, C.BORDAS, K.GRENIER, L.BARY, O.VENDIER, J.L.MURARO, J.L.CAZAUX, R.PLANA
CISHT, TEAM, 2I, ALCATEL ESPACE
Manifestation avec acte : 16th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis (ESREF'2005), Arcachon (France), 10-14 Octobre 2005 , N° 05495
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