Laboratoire d’Analyse et d’Architecture des Systèmes
R.BOSSUYT, L.MAZENQ, V.CONEDERA, J.BALLET, A.M.GUE, J.P. CANO, H.CAMON
TEAM, Essilor Int, Tlse, N2IS
Revue Scientifique : Microsystems Technologies, Vol.18, N°2, pp.175-182, Janvier 2012 , N° 10648
Diffusable
126327R.FULCRAND, A.BANCAUD, C.ESCRIBA, Q.HE, S.CHARLOT, A.BOUKABACHE, A.M.GUE
TEAM, N2IS
Revue Scientifique : Sensors and Actuators B: Chemical, Vol.160, N°1, pp.1520-1528, Décembre 2011 , N° 11573
Diffusable
125625J.CRATTELET, L.FILLAUDEAU, L.AURET, L.SALVAGNAC, A.BOUKABACHE, D.ESTEVE
N2IS, LISBP, NEOSENS, TEAM
Rapport LAAS N°11617, Novembre 2011, 24p.
Diffusion restreinte
125829V.N.PHAN, P.JOSEPH, L.DJEGHLAF, A.ALLOUCH, D.BOURRIER, P.ABGRALL, A.M.GUE, C. YANG, N-T. NGUYEN
NTU, Nanyang, N2IS, TEAM
Revue Scientifique : Heat Transfer Engineering, Vol.32, N°7-8, pp.624-635, Novembre 2011 , N° 10442
Diffusable
125822Y.VIERO, Q.HE, L.MAZENQ, H.RANCHON, J.Y.FOURNIOLS, A.BANCAUD
TEAM, N2IS
Rapport LAAS N°11616, DOI: 10.1007/s10404-011-0888-0, Novembre 2011, 13p.
Diffusable
125827V.BARDINAL, T.CAMPS, B.REIG, D.BARAT, E.DARAN, J.B.DOUCET
PH, N2IS, TEAM
Revue Scientifique : Advances in Optical Technologies, Vol.2011, N°paper ID 609643, 11p., Novembre 2011 , N° 11381
Diffusable
126643P.ARGUEL, J.GRISOLIA, J.LAUNAY, H.TAP, C.DUPRAT, C.CAPELLO, F.GESSINN, F.GUERIN, C.ROUABHI
PH, TEAM, M2D, OSE, AIME
Manifestation avec acte : Colloque sur l'Enseignement des Technologies et des Sciences de l'Information et des Systèmes (CETSIS 2011), Trois Rivières (Canada), 23-26 Octobre 2011, 6p. , N° 11420
Diffusable
126318C.VILLENEUVE, P.PONS, S.AOUBA, P.F.CALMON
MINC, TEAM
Rapport LAAS N°11478, Septembre 2011, 27p.
Diffusable
125279D.DRAGOMIRESCU, M. M.JATLAOUI, S.CHARLOT, T.BELUCH, P.PONS, H.AUBERT, R.PLANA
TEAM, MINC
Manifestation avec acte : International Workshop on Structural Health Monitoring (IWSHM 2011), Stanford (USA), 13-15 Septembre 2011, pp.1519-1526 , N° 11453
Diffusable
125299A.GHANNAM, L.OURAK, D.BOURRIER, C.VIALLON, T.PARRA
MOST, TEAM
Manifestation avec acte : European Solid-State Device Research Conference (ESSDERC 2011), Helsinki (Finlande), 12-16 Septembre 2011, 4p. , N° 11522
Lien : http://hal.archives-ouvertes.fr/hal-00627894/fr/
Diffusable
Plus d'informations
This paper presents a novel and efficient low cost process capable of integrating high-Q above-IC inductors and their interconnects using a single electroplating step. It relies on the SU8 and BPN resist as well as an optimized electroplating technique to form the 3D interconnected inductor. The SU8 is used to form a thick layer located underneath the inductor to elevate it from the substrate. Then, the BPN is used as a high resolution mold (16:1) for copper electroplating. Standard or time optimized electroplating is later used to grow copper in a 3D manner, making the transition between all metallic layers straight forward. High-Q (55 @ 5 GHz) power inductors have been designed and integrated above an RF power LDMOS device using this process. Finally, the process capabilities are demonstrated by integrating a solenoid inductor using only two lithography masks and a single electroplating step.