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Publications de l'équipe MOST

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318documents trouvés

18115
01/06/2018

High-Performance Compact 3-D Solenoids for RF Applications

A.CAYRON, C.VIALLON, O.BUSHUEVA, A.GHANNAM, T.PARRA

MOST, 3DiS Technologies

Revue Scientifique : IEEE Microwave and Wireless Components Letters, Vol.28, N°6, pp.479-481, Juin 2018, doi 10.1109/LMWC.2018.2831438 , N° 18115

Lien : https://hal.archives-ouvertes.fr/hal-01778992

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Abstract

A cost-effective technology is proposed for the integration of very compact and high-performance 3-D solenoid inductors. Based on a two metal level process, it involves a 3-D copper electroplating step for simultaneous integration of vertical and upper sections of coils. Several solenoids fabricated on a glass substrate and ranging from 2.3 nH to 9.5 nH are presented. The best performance is experimentally achieved by a 3-turn 3 nH inductor showing a maximum Q-factor of 58 at 5.6 GHz and a self-resonant frequency of 19 GHz. The best inductance density of 63 nH/mm 2 is reached by an 8-turn 9.5 nH solenoid.

143955
06139
28/05/2018

Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design

G.SOUBERCAZE PUN, J.G.TARTARIN, L.BARY, J.RAYSSAC, E.MORVAN, B.GRIMBERT, S.L.DELAGE, J.C.DE JAEGER, J.GRAFFEUIL

2I, ALCATEL THALES III-V, IEMN Villeneuve, THOMSON CSF-LCR, MOST

Manifestation avec acte : IEEE International Microwave Symposium ( IMS ) 2006 du 11 juin au 16 juin 2006, San Francisco (USA), Mai 2018, 4p. , N° 06139

Lien : https://hal.archives-ouvertes.fr/hal-01343917

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Although GaN technologies were initially developed for solid state source amplifiers, it was recently demonstrated that AlGaN/GaN HEMT transistors were also suitable for low noise applications such as LNA. The frequency synthesis is not yet widely explored for these technologies. In this paper the design of a low phase noise X-Band oscillator is proposed. The low frequency noise performance and the residual phase noise, as well as dynamic S-parameters were carried out on AlGaN/GaN HEMT grown on SiC. A large-signal modeling technique is also presented. The reduced complexity and the good accuracy of our large signal model permits an efficient circuit design, without intensive knowledge of the technological device parameters. These characterization and modeling tools are used for the design of an 1-stage oscillator working at 10 GHz delivering 20dBm.

143596
18127
22/04/2018

Design of an Electro-absorption modulator for integration onto a VCSEL

L.MARIGO-LOMBART, S.CALVEZ, A.ARNOULT, A.RUMEAU, C.VIALLON, H.THIENPONT, G.ALMUNEAU, K.PANAJOTOV

PHOTO, TEAM, I2C, MOST, Bruxelles

Manifestation avec acte : SPIE Photonics Europe. Semiconductor Lasers and Laser Dynamics VII ( SPIE photonics ) 2018 du 22 avril au 26 avril 2018, Strasbourg (France), Avril 2018, 2p. , N° 18127

Lien : https://hal.laas.fr/hal-01780281

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In this work, we have realized a complete optimization cycle from structure design, fabrication to devices characterization, and finally analysis b ased on our model of Asymmetric - Fabry - Perot vertica l electro - absorption modulator. In order to achieve enhanced dynamic absorption effect with a minimized number of MQW, we used a perturbative quantum - confined Stark - effect based on a simple absorption mode l and transfer matrix calculations and optimize the modulation figures of merit as a function of different design parameters under varying applied electrical fields. The epitaxial growth by MBE of different EAM and EAM - VCSEL structures has been done, supp orted by intermediate optical measurements enabling to identify the EAM cavity and VCSEL cavity respective positions. Finally, first static characterizations are done and demonstrate the expected modulation properties of the device. A very good agreement of theoretical predictions for both the effect of the applied field and the temperature on the excitonic peak position and the Fabry - Perot shift experimentally measured on different fabricated EAM structures has been achieved. Thanks to th is, we are now able to design an optim al VCSEL structure with integrated electro - absorption modulator . To aim for very high frequency efficient electrical injection we focused also on the BCB characterization up to 110 Ghz and the injection scheme de sign specific to this triple electrode device. These measurements are of high interest for the optimum design of the access while considering the parasitic effects. We then compare coplanar and micro strip lines access, with a taper or not, to decrease the pad capacitance and so increase the cut - off frequency.

143573
17401
31/10/2017

Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser

L.MARIGO-LOMBART, S.CALVEZ, A.ARNOULT, A.RUMEAU, C.VIALLON, H.THIENPONT, K.PANAJOTOV, G.ALMUNEAU

PHOTO, TEAM, I2C, MOST, Bruxelles

Rapport LAAS N°17401, Octobre 2017

Lien : https://hal.laas.fr/hal-01614811

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Abstract

VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an Electro-Absorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate. 100 words: In this presentation, we describe the operation of Multiple-Quantum-Wells Asymmetric Fabry-Perot modulator, vertically integrated into a VCSEL structure for high-speed modulation. First we optimize the Electro-Absorptive Modulator (EAM) and the EAM-VCSEL structures by utilizing a perturbative quantum-confined Stark-effect and transfer matrix calculations. Then we present experimental reflectivity, LIV curves and photocurrent measurements and demonstrate very good agreement with our modelling results. High frequency measurements of BCB electrical response up to 110 GHz are carried out to estimate the parasitic effects due to the pad configuration and the impact of the substrate.

141379
17336
26/10/2017

Phase noise study based on transfer function in coupled optoelectronic oscillators

R.KHAYATZADEH, V.AUROUX, G.BAILLY, A.FERNANDEZ , O.LLOPIS

MOST, I2C

Manifestation avec acte : International Topical Meeting on Microwave Photonics ( MWP ) 2017 du 23 octobre au 26 octobre 2017, Beijing (Chine), Octobre 2017, 4p. , N° 17336

Lien : https://hal.laas.fr/hal-01587950

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In this paper, the transfer function theory is used to model the phase noise power spectral density in coupled optoelectronic oscillators. A resonator is placed into the model in order to take into account the quality factor (Q) enhancement due to the optical loop. The results of this model are then compared with experimental measurement results. The model is able to describe the phase noise spectrum shape and to give indications on the noise contributors, which helps in improving oscillator's performance.

141077
17505
23/10/2017

Experimental design of a low phase noise coupled optoelectronic oscillator at 10GHz

O.LELIEVRE, V.CROZATIER, G.BAILI, P.NOUCHI, D.DOLFI, L.MORVAN, F.GOLDFARB, F.BRETENAKER, O.LLOPIS

Thales R&T, LAC, MOST

Manifestation avec acte : International Topical Meeting on Microwave Photonics ( MWP ) 2017 du 23 octobre au 26 octobre 2017, Beijing (Chine), Octobre 2017, 4p. , N° 17505

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We present an experimental study on two key elements to design a low phase noise coupled optoelectronic oscillator (COEO). Fiber lengths and dispersions are investigated to highlight the differences between the optical and optoelectronic loops. After optimization, a 10 GHz COEO at 1.5 μm with a total of 590 m of fiber exhibits phase noise levels of -125 dBc/Hz at 1 kHz and -140 dBc/Hz at 10 kHz.

142277
17504
01/10/2017

A Model for Designing Ultralow Noise Single- and Dual-Loop 10-GHz Optoelectronic Oscillators

O.LELIEVRE, V.CROZATIER, P.BERGER, G.BAILI, O.LLOPIS, D.DOLFI, P.NOUCHI, F.GOLDFARB, F.BRETENAKER, L.MORVAN, G.PILLET

Thales R&T, MOST, LAC

Revue Scientifique : Journal of Lightwave Technology, Vol.35, N°20, pp.4366-4374, Octobre 2017 , N° 17504

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A complete model describing both single- and dual-loop optoelectronic oscillators (OEO) is introduced. It is compared to several experimental configurations, with excellent agreement in all cases. The physical insight into noise coupling mechanisms brought by the model further allows us for the design of ultralow noise OEO. Phase noise performances at 10 GHz with a single 1 km delay line and with a dual 1 km/100 m delay lines are reported. An optimized dual loop configuration exhibits low phase noise floor at high offset frequency (-160 dBc/Hz at 100 kHz) and low spur levels (-145 dBc/Hz), here again in close agreement with our model.

142275
17507
13/07/2017

In-situ dispersion measurement of a coupled optoelectronic oscillator

O.LELIEVRE, V.CROZATIER, G.BAILI, P.NOUCHI, D.DOLFI, L.MORVAN, F.GOLDFARB, F.BRETENAKER, O.LLOPIS

Thales R&T, LAC, MOST

Manifestation avec acte : Joint conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum ( IFCS-EFTF ) 2017 du 10 juillet au 13 juillet 2017, Besançon (France), Juillet 2017, 2p. , N° 17507

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142281
17244
13/07/2017

Active devices choice and design of an all cryogenic superconductor resonator oscillator

D.CHAUDY, O.LLOPIS, B.MARCILHAC, O.D'ALLIVY KELLY, J.M.HODE

MOST, UMP Thalès, Thales Airborne Systems

Manifestation avec acte : Joint conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum ( IFCS-EFTF ) 2017 du 10 juillet au 13 juillet 2017, Besançon (France), Juillet 2017, 4p. , N° 17244

Lien : https://hal.archives-ouvertes.fr/hal-01568097

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Abstract

Several silicon-germanium bipolar transistors have been measured at cryogenic temperature regarding their gain and phase noise performance. The electrical model of the chosen device has been extracted. Using this model, the phase noise performance of a cryogenic superconductor oscillator has been simulated. The results are very promising, with a phase noise level of-155 dBc/Hz at 1 kHz offset from of a 1 GHz carrier.

140572
17506
13/07/2017

Low phase noise 10GHz coupled optoelectronic oscillator

O.LELIEVRE, V.CROZATIER, G.BAILI, P.NOUCHI, D.DOLFI, L.MORVAN, F.GOLDFARB, F.BRETENAKER, O.LLOPIS

Thales R&T, LAC, MOST

Manifestation avec acte : Joint conference of the IEEE International Frequency Control Symposium and European Frequency and Time Forum ( IFCS-EFTF ) 2017 du 10 juillet au 13 juillet 2017, Besançon (France), Juillet 2017, 2p. , N° 17506

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We present our recent results on a 10 GHz coupled optoelectronic oscillator (COEO). With a total of 550 m of fiber, the COEO exhibits phase noise level of -140 dBc/Hz at 10 kHz and -137 dBc/Hz for the first spur.

142279
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