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Laboratoire d’analyse et d’architecture des systèmes

Publications de l'équipe MOST

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323documents trouvés

18272
15/07/2018

Highly spectrally pure 90 GHz signal synthesis using a coupled optoelectronic oscillator

A.LY, V.AUROUX, R.KHAYATZADEH, N.GUTIERREZ PANOZZO, A.FERNANDEZ , O.LLOPIS

MOST

Revue Scientifique : IEEE Photonics Technology Letters, Vol.30, N°14, pp.1313-1316, Juillet 2018 , N° 18272

Lien : https://hal.archives-ouvertes.fr/hal-01863561

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Abstract

A 90 GHz frequency reference is synthesized through harmonic generation from a 30 GHz coupled optoelectronic oscillator. The 30 GHz signal and its third harmonic feature an average power level of −5.6 dBm and −15.8 dBm respectively at the photodiode output. Phase noise measurements at 30 GHz and 90 GHz have been performed and phase noise levels as low as −114.4 dBc/Hz at 1 kHz offset for the fundamental and −104 dBc/Hz at 1 kHz offset frequency for the 90 GHz signal have been obtained.

144584
18280
03/07/2018

Oscillateur optoélectronique couplé pour la génération d'ondes millimétriques à haute pureté spectrale

A.LY, R.KHAYATZADEH, V.AUROUX, N.GUTIERREZ PANOZZO, A.FERNANDEZ , O.LLOPIS

MOST

Manifestation avec acte : Horizons de l'Optique ( Optique ) 2018 du 03 juillet au 03 juillet 2018, Toulouse (France), Juillet 2018, 2p. , N° 18280

Lien : https://hal.archives-ouvertes.fr/hal-01863569

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Résumé

Un oscillateur optoélectronique couplé à 30 GHz fait l’objet d’une étude expérimentale et théorique. Le bruit de phase du signal à 30 GHz est particulièrement optimisé. La capacité du système à délivrer des signaux à plus haute fréquence en exploitant la non - linéarité du peigne optique est présenté, avec un exemple de génération de signal à 90 GHz.

144602
18271
02/07/2018

Mesure de la dispersion chromatique de fibres optiques de courtes longueurs par modulation de phase sinusoïdale d'une onde monochromatique : application au COEO

A.LY, G.BAILLY, A.FERNANDEZ , O.LLOPIS

MOST, I2C

Manifestation avec acte : Journée du Club Optique Micro-onde ( JCOM ) 2018 du 02 juillet au 02 juillet 2018, Toulouse (France), Juillet 2018, 2p. , N° 18271

Lien : https://hal.archives-ouvertes.fr/hal-01863572

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Résumé

Les performances en bruit de phase de l'oscillateur optoélectronique couplé (COEO) dépendent fortement du profil temporel du train d'impulsion qu'il génère [1]. Son optimisation passe ainsi, entre autres, par une bonne compensation de la dispersion chromatique introduite par les boucles fibrées, longues de quelques centaines de mètres. Nous présentons ici une méthode simple d'y parvenir et nous montrons comment cela nous a permis de générer des ondes millimétriques (90 GHz) avec un très faible bruit de phase.

144581
18115
01/06/2018

High-Performance Compact 3-D Solenoids for RF Applications

A.CAYRON, C.VIALLON, O.BUSHUEVA, A.GHANNAM, T.PARRA

MOST, 3DiS Technologies

Revue Scientifique : IEEE Microwave and Wireless Components Letters, Vol.28, N°6, pp.479-481, Juin 2018, doi 10.1109/LMWC.2018.2831438 , N° 18115

Lien : https://hal.archives-ouvertes.fr/hal-01778992

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Abstract

A cost-effective technology is proposed for the integration of very compact and high-performance 3-D solenoid inductors. Based on a two metal level process, it involves a 3-D copper electroplating step for simultaneous integration of vertical and upper sections of coils. Several solenoids fabricated on a glass substrate and ranging from 2.3 nH to 9.5 nH are presented. The best performance is experimentally achieved by a 3-turn 3 nH inductor showing a maximum Q-factor of 58 at 5.6 GHz and a self-resonant frequency of 19 GHz. The best inductance density of 63 nH/mm 2 is reached by an 8-turn 9.5 nH solenoid.

143955
06139
28/05/2018

Design of a X-band GaN oscillator: from the low frequency noise device characterization and large signal modeling to circuit design

G.SOUBERCAZE PUN, J.G.TARTARIN, L.BARY, J.RAYSSAC, E.MORVAN, B.GRIMBERT, S.L.DELAGE, J.C.DE JAEGER, J.GRAFFEUIL

2I, ALCATEL THALES III-V, IEMN Villeneuve, THOMSON CSF-LCR, MOST

Manifestation avec acte : IEEE International Microwave Symposium ( IMS ) 2006 du 11 juin au 16 juin 2006, San Francisco (USA), Mai 2018, 4p. , N° 06139

Lien : https://hal.archives-ouvertes.fr/hal-01343917

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Abstract

Although GaN technologies were initially developed for solid state source amplifiers, it was recently demonstrated that AlGaN/GaN HEMT transistors were also suitable for low noise applications such as LNA. The frequency synthesis is not yet widely explored for these technologies. In this paper the design of a low phase noise X-Band oscillator is proposed. The low frequency noise performance and the residual phase noise, as well as dynamic S-parameters were carried out on AlGaN/GaN HEMT grown on SiC. A large-signal modeling technique is also presented. The reduced complexity and the good accuracy of our large signal model permits an efficient circuit design, without intensive knowledge of the technological device parameters. These characterization and modeling tools are used for the design of an 1-stage oscillator working at 10 GHz delivering 20dBm.

143596
18285
22/05/2018

Low phase noise cryogenic amplifiers and oscillators based on superconducting resonators

D.CHAUDY, O.LLOPIS, B.MARCILHAC, Y.LEMAITRE, O.D'ALLIVY KELLY, J.M.HODE

MOST, UMP Thalès, Thales Airborne Systems

Manifestation avec acte : IEEE International Frequency Control Symposium ( IFCS ) 2018 du 21 mai au 24 mai 2018, Olympic Valley (USA), Mai 2018, 3p. , N° 18285

Lien : https://hal.archives-ouvertes.fr/hal-01868407

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Abstract

A cryogenic low phase noise amplifier and an high Q superconductor resonator at 1 GHz have been designed and realized. A good agreement between the measured and simulated data at 80 K for these two devices is observed. An all cryogenic oscillator has also been designed with the same devices on an alumina substrate. This oscillator is still under test.

144623
18308
07/05/2018

Methodology for accurate diagnostic of defects in III-N HEMT technologies Non-destructive and destructive experimental tools-electrical and T-CAD models

J.G.TARTARIN, D.SAUGNON, J.GRAFFEUIL, L.BARY

MOST, I2C

Manifestation avec acte : IEEE Mediterranean Electrotechnical Conference ( IEEE MELECON ) 2018 du 02 mai au 07 mai 2018, Marrakech (Maroc), Mai 2018, 5p. , N° 18308

Lien : https://hal.laas.fr/hal-01877587

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Abstract

III-V wide bandgap disruptive technology is firmly positioned as a leader for high power segments operating at high frequency or under switching mode. Still, it is needed to investigate these transistors to push the maturity towards higher levels and to address elevated junction temperatures. Concerning analog RF applications, more than two decades of studies lay the main technological process basis for both obtaining improved RF performances and reliability. However, if failure signatures and their associated defects are now issues likely to be understood as individual problems, the global failure behavior still poses challenges to overcome. This paper is a contribution to the failure analysis studies on GaN technologies by providing a methodology for ensuring the validity of the stress analysis, to the accurate identification of the involved defects; this procedure is suitable even for a single stress test campaign, when usually several accelerated life tests are needed to separate concurrently proceeding effects. This methodology is based on the use of destructive and non-destructive characterization techniques, as well as electrical modelling. Key degradation processes are highlighted from different feedback studies, still considering the need of a secure procedure to avoid any misunderstanding about the origin of the tracked DC or RF variation of the devices under test.

144770
18127
22/04/2018

Design of an Electro-absorption modulator for integration onto a VCSEL

L.MARIGO-LOMBART, S.CALVEZ, A.ARNOULT, A.RUMEAU, C.VIALLON, H.THIENPONT, G.ALMUNEAU, K.PANAJOTOV

PHOTO, TEAM, I2C, MOST, Bruxelles

Manifestation avec acte : SPIE Photonics Europe. Semiconductor Lasers and Laser Dynamics VII ( SPIE photonics ) 2018 du 22 avril au 26 avril 2018, Strasbourg (France), Avril 2018, 2p. , N° 18127

Lien : https://hal.laas.fr/hal-01780281

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In this work, we have realized a complete optimization cycle from structure design, fabrication to devices characterization, and finally analysis b ased on our model of Asymmetric - Fabry - Perot vertica l electro - absorption modulator. In order to achieve enhanced dynamic absorption effect with a minimized number of MQW, we used a perturbative quantum - confined Stark - effect based on a simple absorption mode l and transfer matrix calculations and optimize the modulation figures of merit as a function of different design parameters under varying applied electrical fields. The epitaxial growth by MBE of different EAM and EAM - VCSEL structures has been done, supp orted by intermediate optical measurements enabling to identify the EAM cavity and VCSEL cavity respective positions. Finally, first static characterizations are done and demonstrate the expected modulation properties of the device. A very good agreement of theoretical predictions for both the effect of the applied field and the temperature on the excitonic peak position and the Fabry - Perot shift experimentally measured on different fabricated EAM structures has been achieved. Thanks to th is, we are now able to design an optim al VCSEL structure with integrated electro - absorption modulator . To aim for very high frequency efficient electrical injection we focused also on the BCB characterization up to 110 Ghz and the injection scheme de sign specific to this triple electrode device. These measurements are of high interest for the optimum design of the access while considering the parasitic effects. We then compare coplanar and micro strip lines access, with a taper or not, to decrease the pad capacitance and so increase the cut - off frequency.

143573
17401
31/10/2017

Integration of electro-absorption modulator in a vertical-cavity surface-emitting laser

L.MARIGO-LOMBART, S.CALVEZ, A.ARNOULT, A.RUMEAU, C.VIALLON, H.THIENPONT, K.PANAJOTOV, G.ALMUNEAU

PHOTO, TEAM, I2C, MOST, Bruxelles

Rapport LAAS N°17401, Octobre 2017

Lien : https://hal.laas.fr/hal-01614811

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Abstract

VCSELs became dominant laser sources in many short optical link applications such as datacenter, active cables, etc. Actual standards and commercialized VCSEL are providing 25 Gb/s data rates, but new solutions are expected to settle the next device generation enabling 100 Gb/s. Directly modulated VCSEL have been extensively studied and improved to reach bandwidths in the range of 26-32 GHz [Chalmers, TU Berlin], however at the price of increased applied current and thus reduced device lifetime. Furthermore, the relaxation oscillation limit still subsists with this solution. Thus, splitting the emission and the modulation functions as done with DFB lasers is a very promising alternative [TI-Tech, TU Berlin]. Here, we study the vertical integration of an Electro-Absorption Modulator (EAM) within a VCSEL, where the output light of the VCSEL is modulated through the EAM section. In our original design, we finely optimized the EAM design to maximize the modulation depth by implementing perturbative Quantum Confined Stark Effect (QCSE) calculations, while designing the vertical integration of the EAM without penalty on the VCSEL static performances. We will present the different fabricated vertical structures, as well as the experimental electrical and optical static measurements for those configurations demonstrating a very good agreement with the reflectivity and absorption simulations obtained for both the VCSEL and the EAM-VCSEL structures. Finally, to reach very high frequency modulation we studied the BCB electrical properties up to 110 GHz and investigated coplanar and microstrip lines access to decrease both the parasitic capacitance and the influence of the substrate. 100 words: In this presentation, we describe the operation of Multiple-Quantum-Wells Asymmetric Fabry-Perot modulator, vertically integrated into a VCSEL structure for high-speed modulation. First we optimize the Electro-Absorptive Modulator (EAM) and the EAM-VCSEL structures by utilizing a perturbative quantum-confined Stark-effect and transfer matrix calculations. Then we present experimental reflectivity, LIV curves and photocurrent measurements and demonstrate very good agreement with our modelling results. High frequency measurements of BCB electrical response up to 110 GHz are carried out to estimate the parasitic effects due to the pad configuration and the impact of the substrate.

141379
17336
26/10/2017

Phase noise study based on transfer function in coupled optoelectronic oscillators

R.KHAYATZADEH, V.AUROUX, G.BAILLY, A.FERNANDEZ , O.LLOPIS

MOST, I2C

Manifestation avec acte : International Topical Meeting on Microwave Photonics ( MWP ) 2017 du 23 octobre au 26 octobre 2017, Beijing (Chine), Octobre 2017, 4p. , N° 17336

Lien : https://hal.laas.fr/hal-01587950

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Abstract

In this paper, the transfer function theory is used to model the phase noise power spectral density in coupled optoelectronic oscillators. A resonator is placed into the model in order to take into account the quality factor (Q) enhancement due to the optical loop. The results of this model are then compared with experimental measurement results. The model is able to describe the phase noise spectrum shape and to give indications on the noise contributors, which helps in improving oscillator's performance.

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