Molecular beam epitaxy

The MBE area includes means of elaboration of GaAs based materials III/V.  The two frames of molecular beam epitaxy, connected by ultra high vacuum, and the means of characterization dedicated, are integrated into a class 10000 - ISO7 room .

Equipments

RIBER 2300

effusion cells :
Ga, In, Al
2xAs
H plasma cell
RHEED 20kV
Mass spectrometer
ionic and turbo pumps


bâti RIBER 32P

effusion cells :
Ga, In, 2xAl
As (cracker)
Si, Be
N plasma cell
RHEED 10kV
Mass spectrometer
Dynamic accordable interferometry
Low temperature pyrometer
ionic and cryo pumps

Dedicated characterization equipments


Auger Riber under UHV




Ambiant temperature photoluminescence

Technical staff

Know how

Epitaxy of Photonic Components:

·         Lasers quantum well GaAs/AlGaAS, GaInAs–alinas / GaAs, GaInAsN/GaAs

·         Lasers emitting surface (VCSEL)

·         Lasers Photonic crystals

Epitaxy on surfaces (100), (111) A, (111) B, (110)

Epitaxy of nitrided alloys on surfaces of different orientations. 

Epitaxy of quantum boxes SK InAs/GaAs

Surface decontamination and recovery of epitaxy


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