In the framework of FunFACS project, the electrical properties of broad-area 850nm top emitting VCSELs have been investigated in order to improve carrier injection uniformity in their active zone. We have demonstrated using an electrical simulation tool that a multi-point localized injection design associated with a spreading layer at the top of the device (ITO) can lead to a significant improvement of carrier injection and on its spatial distribution. The electrical contrast achievable by applying this method with localized etchings has been experimentally measured. Stripe-shaped devices with output power up to 50mW in a continuous-wave operation at room temperature have been demonstrated.