Références

  •  “Nano-analytical and electrical characterization of 4H-SiC MOSFETs“, A.Beltran, S.Schamm, V.Mortet, M.Lefebvre, E.Bedel-Pereira, F.Cristiano, C.Strenger, V.Haublein, A.J.Bauer, Materials Science Forum Vol. 711 (2012) pp 134-138

  • “Comparative study of electrical and microstructural investigations of 4H-SiC MOSFETs”, C.Strenger, V.Haublein, T.Erlbacher, A.J.Bauer, H.Ryssel, A.Beltran, S.Schamm, V.Mortet, E.Bedel-Pereira, M.Lefebvre, F.Cristiano, Materials Science Forum Vols. 717-720 (2012) pp 437-440