The research activity of the MPN team covers the fields of “Materials science” and “new processes development” within the “advanced MOS” technology domain. Our main objectives are:

• The understanding and modeling of the investigated physical phenomena
• The optimization of fabrication processes
• The realization of novel devices

Historically, the improvement of the performances of MOS transistors, the building block of all integrated circuits, has relied on their continuous miniaturization (More Moore). Today, MOS technology is seen as an “extended platform” for the integration of future multifunctional electronics (More-than-Moore and Beyond CMOS).

The team’s research activities listed below are developed in the frame of such « extended-CMOS » domain:

• Ultra-Shallow source/drain Junction formation in advanced MOS
• Vertical NW arrays-based transistors
• NW-based nanosystems
• Mobility improvement in SiC power devices

The investigated materials and devices are fabricated in the LAAS clean room facility or provided by our collaborators. Our investigations are based on different characterization methods, including structural (TEM), chemical (SIMS), optical (PL) and electrical (DLTS, Hall).