In the framework of FunFACS project, the electrical properties of broad-area 850nm top emitting VCSELs have been investigated in order to improve carrier injection uniformity in their active zone. We have demonstrated using an electrical simulation tool that a multi-point localized injection design associated with a spreading layer at the top of the device (ITO) can lead to a significant improvement of carrier injection and on its spatial distribution. The electrical contrast achievable by applying this method with localized etchings has been experimentally measured. Stripe-shaped devices with output power up to 50mW in a continuous-wave operation at room temperature have been demonstrated. (E.Havard PhD thesis in PHOTO and N2IS groups)
[European Physical Journal D, 59, 1, 2010]
 
We are now studying the properties of alternative TCO (Transparent Conductive Oxides) such as ZnO in collaboration with CIRIMAT and NCKU Taïwan.

People : V. Bardinal, I. Seguy, T. Camps (N2IS)