Projects in progress

  • MoreGaN (“Power MOSFETs realization one Nitride Gallium”): this project is supported by the National Agency of Research (ANR), “Blanc” call for projects (2007-2010). In this project, the LAAS studies the feasibility of gallium nitride (GaN) normally-off power MOS switches on silicon substrate, in collaboration with 3 laboratories (CRHEA-CNRS, IMN, LAPLACE).
  • ToPoGaN1 (“Toulouse Power GaN N°1” or “Demonstrator of a GaN power transistor on a large diameter silicon substrate”): this project is supported by the National Agency of Research (ANR), “Nano-INNOV” call for projects “/RT” (2009-2010). In this project, the LAAS takes part in the manufacture and the invention of new normally-off power HEMT structures with 8 industrial and academic partners (Freescale, CEA-LETI, 3-5 Lab, SOITEC, CRHEA-CNRS, G2Elab, LTM, IMN).

    • In the MOreGaN and ToPoGaN1 projects, primarily technological challenges (epitaxial growth on silicon substrate, etching, dielectric deposition, quality of the interface ‘oxide/semiconductor’, metallization,…) and conceptual challenges (creation of new architectures adapted to the problems of GaN fine layers) are numerous and will require probably several years of research before being able to manufacture a power performant, reliable, low cost normally-off power switch (MOS and/or HEMT).

  • DIAMONIX (2007-2010): labelled project by word competitiveness cluster “Aéronoautics, Space, Embedded Systems” (Aerospace Valley AESE), it is supported by the Fund of Competitiveness of Companies (FCE). This project groups together, industrial (Alstom, Nexter, IBS, NovaSiC) and the main academic actors of the diamond technology (LIMIHP, GEMac, LAPLACE, LAAS, AMP, LGP). The purpose is to develop principal technological steps (layer growth, devices design and realisation, encapsulation) necessary to obtain power PIN diode. In this project, the LAAS is implied in the development of the basic technological stages (contacts realisation, doping by implantation, etching, passivation…), but also of the TCAD Sentaurus platform design.
  • DIAMOOND (“DIAMond Off ONE Devices”): project supported by the National agency of Research (ANR), “White” call for projects (2006-2010). In this project, the LAAS aims to produce a switch of power PIP whose conduction is ensured by carriers created in Intrinsic zone , by an electron beam, in collaboration with French laboratories (LIMHP, Institut Néel, LTN-INRETS).