These research projects are focused on silicon power devices: silicon is the most used material in power applications because of its low cost and its mature technology nowadays. This way requires the invention of original architectures of MOS and IGBT devices. The use of the semiconductor volume is the common denominator of these new semiconductor structures. This work is strongly based on our knowledge of the new 3D structures and on the expertise of our technological platform for the implementation of suitable technologies (multi-epitaxies, deep etching of the silicon, trench filling by dielectric and conducting materials…).