Microwave Devices and Circuits

Our aim is to design state-of-the art microwave and millimeter wave integrated circuits (using bipolar or field effect transistors), such as oscillators with minimum phase noise (at ambient and cryogenic temperatures) or mixers and frequency dividers with maximum conversion gain and linearity, and minimum added noise. Certain electromagnetic effects need to be accounted for at the design level by using appropriate 2D or 3D software.

These circuits are processed in foundries (multichip projects) and are tested on wafer at up to 70 GHz in our facilities, at temperatures ranging from - 65°C to 20°C.

A 14/12 GHZ frequency converter. The record reduced dimensions(3mm2) of the chip are the consequence of a uniplanar implementation using PHEMT devices associated with CPW and slotlines on GaAs.