Groupe CCM

Microwave Devices and Circuits

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CHARACTERISATION AND MODELLING

Electrical characterisation (including low and high frequency noise) and modelling of new FET devices (pseudomorphic HEMTs on GaAs and InP) and recent bipolar devices (with GaAlAs/GaAs, GaInP/GaAs or Si/SiGe heterojunctions) are being carried out at ambient or cryogenic temperatures. The goal is twofold.

 

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Microwave and noise characterisation facilities (up to 67 GHz)

On one hand, physical properties (mostly related to electrical noise, reliability and non-linear behavior) are being investigated and, on the other hand, equivalent electrical networks (including noise and non linear elements) are being elaborated in order to further improve integrated circuit design.

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