Thermal treatment

Technical staff

The thermal process area is dedicated to the elaboration, deposition and treatment of several materials for Microelectronics and Microsystems technology. There are 21 tubes (7 furnaces stacks), 1 standard PECVD reactor, 1 ICPECVD, 2 rapid thermal systems. The old tubes are laboratory furnaces (20 cm of flat zone for 4” wafers) and the new ones are industrial furnaces (50cm of flat zone for 6” wafers).

Material Elaboration Equipement

 4" AET annealing furnaces

4" AET oxidation furnaces

6" Centrotherm oxidation and drive in furnaces

6" Centrotherm LPCVD and annealing furnaces



AET LPCVD vertical furnace

STS Standard PECVD reactor
Annealsys Si RTP

Annealsys AsGa RTP

AET 6" annealing furnaces


OXFORD ICPECVD Reactor                     

AET GaAlAs wet oxidation furnace        


  • SiO2 for masking and for MOS components
  • Drive in of N and P type dopants in the Silicon and the Polysilicon
  • Thermal Phosphorus diffusion 
  • Boron doped or undopped polysilicon deposition
  • SiNx, SiO2, SiON deposition using CCPECVD and ICPECVD
  • Metal annealing
  • Si and GaAs rapid thermal treatment
  • GaAlAs wet oxidation

Elaboration examples

VCSEL realization with the control of the wet oxidation of the Al in the GaAlAs layer 


SiO2 ICPECVD Deposition on photoresist

Thermal oxidation for Si nanowire fabrication