Thermal treatment

Technical staff


The thermal process area is dedicated to the elaboration, deposition and treatment of several materials for Microelectronics and Microsystems technology. There are 21 tubes (7 furnaces stacks), 1 standard PECVD reactor, 1 ICPECVD, 2 rapid thermal systems. The old tubes are laboratory furnaces (20 cm of flat zone for 4” wafers) and the new ones are industrial furnaces (50cm of flat zone for 6” wafers).





Material Elaboration Equipement

 4" AET annealing furnaces









4" AET oxidation furnaces





6" Centrotherm oxidation and drive in furnaces


6" Centrotherm LPCVD and annealing furnaces


4"TEMPRESSLPCVD furnaces 

Scrubber



AET LPCVD vertical furnace



STS Standard PECVD reactor
Annealsys Si RTP

Annealsys AsGa RTP








AET 6" annealing furnaces


 



OXFORD ICPECVD Reactor                     



AET GaAlAs wet oxidation furnace        

Know-How

  • SiO2 for masking and for MOS components
  • Drive in of N and P type dopants in the Silicon and the Polysilicon
  • Thermal Phosphorus diffusion 
  • Boron doped or undopped polysilicon deposition
  • SiNx, SiO2, SiON deposition using CCPECVD and ICPECVD
  • Metal annealing
  • Si and GaAs rapid thermal treatment
  • GaAlAs wet oxidation


Elaboration examples



VCSEL realization with the control of the wet oxidation of the Al in the GaAlAs layer 


 


SiO2 ICPECVD Deposition on photoresist


Thermal oxidation for Si nanowire fabrication