Molecular Beam Epitaxy

The MBE area includes means of elaboration of GaAs based materials III/V.  The two frames of molecular beam epitaxy, connected by ultra high vacuum, and the means of characterization dedicated, are integrated into a class 10000 - ISO7 room .

Equipments

RIBER 2300

effusion cells :
Ga, In, Al
2xAs
H plasma cell
RHEED 20kV
Mass spectrometer
ionic and turbo pumps


Bâti RIBER 32P

effusion cells :
Ga, In, 2xAl
As (cracker)
Si, Be
N plasma cell
RHEED 10kV
Mass spectrometer
Dynamic accordable interferometry
Low temperature pyrometer
ionic and cryo pumps

RIBER MBE 412
(new equipment since 2012)

Effusion cells :
2xGa, 2xAl, 2xIn
2x(As) cracker
Sb, Si, C (CBr4)
Valved N plasma cell
RHEED 12kV + KSA400
Pyrometer
KSA BandiT
Mass spectrometer
Ion pump
Cryo pump

Cluster robot :
Load/unload
Park
High temperature degassing stage              


Dedicated characterization equipments 


Auger Riber under UHV




Ambiant temperature photoluminescence


High Resolution X-Ray diffractometer
BRUKER D8 Discover (Da Vinci  design)      
                                                                                              

Technical staff

Know how

Epitaxy of Photonic Components:

·         Lasers quantum well GaAs/AlGaAS, GaInAs–alinas / GaAs, GaInAsN/GaAs

·         Lasers emitting surface (VCSEL)

·         Lasers Photonic crystals

Epitaxy on surfaces (100), (111) A, (111) B, (110)

Epitaxy of nitrided alloys on surfaces of different orientations. 

Epitaxy of quantum boxes SK InAs/GaAs

Surface decontamination and recovery of epitaxy


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