Document sans titre
Séminaire de l'équipe MPN :
III-V nanowires : from growth to applications.
Le 18 Juin 2012 à 14h00Intervenant
Sébastien R. PLISSARDDr.
Eindhoven University of Technology
E-mail : email@example.comLieu
|LAAS-CNRS - Salle Feynman|
|7 avenue du Colonel Roche|
|31077 TOULOUSE Cedex 4|
III-V nanowires have shown great promises in the recent years thanks to the ability to control their dimensions, position, doping and to design heterostructures, both axially and laterally. This makes them an important tool to study fundamental nanoscale phenomena and open new possibilities for future electronic and optoelectronic devices.
From the growth point of view, even if the Vapor Liquid Solid mechanism leading to the formation of nanowires is known since 1964 , the chemistry around them is mainly unknown. With the development of new advanced lithography techniques it is now possible to perfectly control the nanoscale environment around the nanowires, which lead to a better understanding of crucial growth mechanisms .
With the integration of nanowires on silicon new possibilities also emerge to combine both III-V semiconductors and the silicon platform. Finally, advanced devices using nanowires emerged recently leading for example to the detection of first hints of the Majorana fermion .
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2 - “From InSb nanowires to nanocubes: looking for the sweet spot”
S.R. Plissard, D. Slapak, M.A. Verheijen, M. Hocevar, G.W.G. Immink, I. van Weperen, S. Nadj-Perge, S. Frolov, L.P. Kouwenhoven, and E.P.A.M. Bakkers Nano Letters 2012 12, 1794-1798 - DOI: 10.1021/nl203846g
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